dm t6010lfg document number: d s36620 rev. 3 - 2 1 of 6 www.diodes.com february 2015 ? diodes incorporated d mt6010lfg new product advance information n - channel enhancement mode mosfet product summary v (br)dss r ds(on) max i d max t c = + 25c 6 0v 7.5 m ? @ v gs = 10 v 30a 11.5 m ? @ v gs = 4 .5v 25 a description and applications this mosfet is designed to minimize the on - state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. ? synchronous rectifier ? backlighting ? power m anagement f unctions ? dc - dc converters features and benefits ? low r ds(on) C ensures on state losses are minimized . ? excellent q gd x r ds (on ) product (fom) ? a dvanced t echnology for dc - dc c onvert ers ? small form factor thermally efficient package enables higher density end products . ? occupies just 33% of the board area occupied by so - 8 , enabling smaller end product . ? 100% uis (avalanche) r ated ? totally lead - free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) ? qualified to aec - q101 standards for high reliability mechanical data ? case: p ower di ? 3333 - 8 ? case material: molded plastic, "green" molding compound ; ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections indicator: see d iagram ? terminal finish - matte tin a nnealed over copper leadframe ; solderable per mil - std - 202, method 208 ? weight: 0.008 grams ( a pproximate ) ordering information (note 4 ) part number case packaging dmt 6010 lfg - 7 powerdi ? 3333 - 8 2 , 000 /tape & reel dmt 6010 lfg - 13 powerdi ? 3333 - 8 3 , 000 /tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and anti mony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http://www.diodes.com /products/packages.html . marking information top view equivalent circuit sg6 = product type marking code yyww = date code marking yy = last digit of year (ex: 1 3 = 201 3 ) ww = week code (01 ~ 53) bottom view s s s g d d d d pin 1 d s g
dm t6010lfg document number: d s36620 rev. 3 - 2 2 of 6 www.diodes.com february 2015 ? diodes incorporated d mt6010lfg new product advance information maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value units drain - source voltage v dss 6 0 v gate - source voltage v gss 20 v continuous drain current (note 5 ) v gs = 10 v t a = + 25 c t a = + 70 c i d 1 3 11 a t c = + 25 c t c = + 70 c i d 30 24 a maximum continuous body diode f orward current (note 5 ) i s 3 a pulsed drain current ( 10 dm 80 a avalanche current , l=0.1mh i a s 2 0 a avalanche energy , l=0.1mh e a s 64 mj thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 5 ) t a = + 25c p d 2.2 w t c = + 25 c 41 thermal resistance, junction to ambient (note 5 ) s teady state r ja 55 c/w t<10s 35 thermal resistance, junction to case (note 5 ) r j c 3 operating and storage temperature range t j, t stg - 55 to + 150 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 6 ) drain - source breakdown voltage bv dss 6 0 gs = 0v, i d = 250a dss ds = 48 v , v gs = 0v gate - source leakage i gss gs = 20 v, v ds = 0v on characteristics (note 6 ) gate threshold voltage v gs(th) 0. 8 ds = v gs , i d = 250 a ds (on) ? gs = 10 v, i d = 20 a gs = 4 .5v, i d = 20 a diode forward voltage v sd gs = 0v, i s = 20 a dynamic characteristics (note 7 ) input capacitance c iss ds = 30 v, v gs = 0v , f = 1.0mhz output capacitance c oss rss g ? ds = 0 v, v gs = 0v , f = 1.0mhz total gate charge ( v gs = 4.5 v ) q g ds = 30 v, i d = 20 a total gate charge ( v gs = 10 v ) q g gs gd d(on) dd = 30 v, v gs = 10 v, i d = 20 a , r g = 3 r d(off) f notes: 5 . r ja is determined with the device mounted on fr - 4 substrate pc board, 2oz copper, with 1 - inch square copper plate. r jc is guaranteed by design while r ja is determined by the users board design. 6 . short duration pulse test used to minimize self - heating effect. 7 . guaranteed by design. not subject to product testing.
dm t6010lfg document number: d s36620 rev. 3 - 2 3 of 6 www.diodes.com february 2015 ? diodes incorporated d mt6010lfg new product advance information 0.0 5.0 10.0 15.0 20.0 25.0 30.0 0 1 2 3 4 5 v , drain-source voltage (v) figure 1 typical output characteristic ds i , d r a i n c u r r e n t ( a ) d v = 2.5v gs v = 3.0v gs v = 4.0v gs v = 4.5v gs v = 10v gs v = 2.2v gs v = 3.5v gs 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v , gate-source voltage (v) gs figure 2 typical transfer characteristics i , d r a i n c u r r e n t ( a ) d v = 5.0v ds t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a 0.004 0.005 0.006 0.007 0.008 0.009 0.01 0 2 4 6 8 10 12 14 16 18 20 i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v = 4.5v gs v = 10v gs 0 0.002 0.004 0.006 0.008 0.01 0.012 0.014 0.016 0.018 0.02 0 5 10 15 20 25 30 i , drain current (a) d figure 4 typical on-resistance vs. drain current and temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs 0.4 0.8 1.2 1.6 2 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) figure 5 on-resistance variation with temperature j ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) v = 5v i = 5a gs d v = v i = 10a gs d 10 0 0.002 0.004 0.006 0.008 0.01 0.012 0.014 0.016 0.018 0.02 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) figure 6 on-resistance variation with temperature j ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v = 5v i = 5a gs d v = v i = 10a gs d 10
dm t6010lfg document number: d s36620 rev. 3 - 2 4 of 6 www.diodes.com february 2015 ? diodes incorporated d mt6010lfg new product advance information 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) figure 7 gate threshold variation vs. ambient temperature j ? i = 1ma d i = 250a d v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) 0 5 10 15 20 25 30 0 0.3 0.6 0.9 1.2 1.5 v , source-drain voltage (v) sd figure 8 diode forward voltage vs. current i , s o u r c e c u r r e n t ( a ) s t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a 1 10 100 1000 10000 0 10 20 30 40 v , drain-source voltage (v) ds figure 9 typical junction capacitance c , j u n c t i o n c a p a c i t a n c e ( p f ) t c iss f = 1mhz c oss c rss 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 40 45 q (nc) g , total gate charge figure 10 gate charge v g a t e t h r e s h o l d v o l t a g e ( v ) g s v = 30v i = a ds d 20 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, pulse duration time (sec) figure 11 transient thermal resistance r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e d = 0.5 d = 0.7 d = 0.9 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse r (t) = r(t) * r r = 122c/w duty cycle, d = t1/ t2 ?? ? ja ja ja
dm t6010lfg document number: d s36620 rev. 3 - 2 5 of 6 www.diodes.com february 2015 ? diodes incorporated d mt6010lfg new product advance information package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version . suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. powerdi ? 3333 - 8 dim min max typ d 3.25 3.35 3.30 e 3.25 3.35 3.30 d2 2.22 2.32 2.27 e2 1.56 1.66 1.61 a 0.75 0.85 0.80 a1 0 0.05 0.02 a3 ? ? ? ? b 0.27 0.37 0.32 b2 ? ? ? ? l 0.35 0.45 0.40 l1 ? ? ? ? e ? ? ? ? z ? ? ? ? all dimensions in mm dimensions value (in mm) c 0.650 g 0.230 g1 0.420 y 3.700 y1 2.250 y2 1.850 y3 0.700 x 2.370 x2 0.420 a a1 a3 d d2 e e2 b2 (4x) l (4x) l1 (3x) b (8x) e z (4x) pin 1 id 1 4 8 5 x y y1 y3 y2 x2 c 1 4 8 5 g g1
dm t6010lfg document number: d s36620 rev. 3 - 2 6 of 6 www.diodes.com february 2015 ? diodes incorporated d mt6010lfg new product advance information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of t his document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application , customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or fore ign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorp orated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safe ty - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes in corporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 2015 , dio des incorporated www.diodes.com
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